• 《支化打断型共轭聚合物的傅克聚合及性能研究》
  • 作者:刘正东
  • 单位:南京邮电大学
  • 论文名称 支化打断型共轭聚合物的傅克聚合及性能研究
    作者 刘正东
    学科 光学工程
    学位授予单位 南京邮电大学
    导师 黄维,解令海指导
    出版年份 2016
    中文摘要 发展简单高效、便捷、原子经济的聚合物半导体光电功能材料的合成方法以及设计开发结构新颖、性能优异的聚合物半导体材料对有机电子学的理论研究和产业化发展具有重要的意义。本论文以新型聚合物半导体的设计、合成为出发点,提出了芴基叔醇的傅克聚合制备半导体材料的方法,制备了一系列的支化打断型共轭聚合物;结合p-n能带理论在半导体材料设计中的指导意义和傅克聚合方法,设计合成了p-n型支化打断型共轭聚合物;应用傅克后修饰法对合成的聚合物进行末端官能团的位阻功能化,调控了聚合物的带隙,制备了具有良好光谱稳定性和电化学稳定性的支化打断型共轭聚合物;最后,系统的研究了所得聚合物的光电性能,重点将合成的聚合物应用于有机晶体管电存储中的驻极体层,研究了它们的电荷存储性能。此外,通过化学气相沉积法和高温还原法分别制备了柔性铜镍合金纳米线/石墨烯电极和条形状的还原氧化石墨烯(reducd graphene oxide,rGO)电极。随后以条形状的rGO电极为上下电极、位阻功能化的打断型共轭聚合物为活性层,通过全溶液法制备了柔性有机电存储器件。本论文内容如下: 1.首先总结了聚合物半导体的设计理念和合成方法,重点阐述了芴基叔醇的傅克反应合成有机半导体材料的研究进展,进一步阐述了支化共轭聚合物的合成和在光电器件中的应用。随后对有机场效应晶体管电存储中的驻极体层和柔性有机电存储器件的研究进展进行了系统概述。最后,提出了本论文的设计思路和主要研究内容。 2.基于课题组在三氟化硼乙醚催化的芴基叔醇傅克反应合成小分子半导体材料方面的工作基础,提出了三氟化硼乙醚催化的AB〓(x≥2)型芴基叔醇的傅克聚合制备支化打断型共轭聚合物的方法,具有简单高效、无贵金属催化和原子经济的特点。通过对聚合反应条件的探究发现聚合反应在短时间内(<5min)即可完成。逐步滴加单体法时一种将反应单体慢慢加入到聚合反应体系中,来提高聚合物分子量的方法。当采用逐步滴加单体到反应液中的方法时,所得聚合物的分子量(Mn)达到22700g/mol,PDI为1.52。在此基础上拓展了叔醇单体选择范围,合成了一系列芴基和环戊并二噻吩基支化打断型共轭聚合物并研究了它们的光电性能,其中环戊并二噻吩基支化打断型共轭聚合物的吸收光谱达到了近红外范围。 3.基于p-n能带理论,首先设计、合成了含给电子基团咔唑或者噻吩(P型基团)、吸电子基团氰基(n型基团)的P-n型芴基叔醇分子,以之为前驱体通过傅克聚合制备得到p-n型支化打断型共轭聚合物。测试得知与不含氰基的聚合物相比,所得聚合物的吸收和发射光谱出现了明显的红移。薄膜态的发射光谱表明,氰基引入不仅抑制了聚合物绿光带发射,也降低了聚合物的能隙,有利于载流子的注入。 4.采用三氟化硼乙醚催化的叔醇傅克后修饰法,选择基团9-苯基芴和3-联芴对末端活性基团为咔唑的支化打断型共轭聚合物PCzPF进行位阻功能化,发现聚合物的位阻功能化提高了材料的光谱和电化学稳定性。9-苯基芴修饰的聚合物的HOMO能级上升、LUMO能级下降,有效调控了聚合物的能隙。 5.将支化打断型共轭聚合物PCzPPF、PCzPF、PCNCzPF和PCPDT8应用于晶体管电存储器件中的驻极体层,通过研究器件的性能探究了聚合物所含官能团和存储性能之间的关系。当对器件施加负向栅压时可以对晶体管电存储进行信息的写入(注入空穴),而光照可以对器件的信息进行擦除。随着所施加的负向栅压的增大,器件转移曲线的偏移增大,因此器件表现出多阶电存储的性能。在空穴存储模式下,基于含高电子云密度官能团的PCPDT8和给受体官能团的PCNCzPF的晶体管电存储表现出大的存储窗口,分别为34.2和45.0V。当对器件施加正向栅压并辅以光照时(注入电子),器件转移曲线发生正向偏移,说明器件驻极体层中写入了电子。当施加负向的栅压时,转移曲线返回初始态。在这种情况下,基于PCzPPF和PCzPF的器件表现出大的存储窗口,分别为42.7和40.5V。由于器件既可以通过施加负向栅压写入空穴,也可以通过施加正向栅压辅以光照的方式写入电子,因此器件表现为双极性的电存储性能。器件的存储窗口为空穴存储模式和电子存储模式时存储窗口的累加。这样,基于PCzPPF、PCzPF、PCNCzPF和PCPDT8的晶体管电存储的存储窗口分别为73.3、69.6、 63.6和69.3V。 6.为了实现支化打断型共轭聚合物在全溶液加工的柔性有机电子器件中的应用,我们开展了柔性石墨烯电极的制备。首先通过静电纺丝的方法制备了含金属盐(醋酸铜或镍)的聚合物纳米线,然后将聚合物纳米线依次经过煅烧、还原得到金属纳米线。以金属纳米线为模板、聚苯乙烯为固体碳源,通过化学气相沉积法在纳米线上实现了石墨烯的低温生长(450℃)。石墨烯包裹后的金属纳米线抗氧化性和抗腐蚀性增强。以石墨烯/铜镍合金纳米线为电极,制备了柔性交流电致发光器件。此外,通过高温还原法制备了条形状的石墨烯导电薄膜。以前面位阻功能化的聚合物PCzPF-PF为活性层、石墨烯导电薄膜为上下电极,通过全溶液加工法制备了柔性有机电存储器件。所得器件表现出可擦写的电存储性能,在0.5V读取情况下开关比为3.0×10?。在弯曲状态下,器件在低导态和高导态时的电流保持稳定,说明器件具有良好的机械稳定性。可以预见,这种全溶液加工法制备柔性有机电存储器件的方法也可以应用于其它有机电子器件的制备。 关键词:芴基叔醇,傅克聚合反应,打断型共轭聚合物,有机电存储,全溶液加工
    英文摘要 Developing simple, efficient, convenient and atom-economical methods to synthesize optoelectronic functional polymer semiconductors with novel structures and desired performances is of great important for the development of theoretical research and industrial in the field of organic electronics. At the beginning of our studies, we proposed the design and synthesis of polymer semiconductors through Friedel-Crafts polymerization of fluorenyl tertiary alcohols. Kinds of branched interrupted conjugation polymers (BICPs) were prepared. Then, combine with the pnenergy band theory and Friedel-Crafts polymerization, p-n type BICPs were prepared. Through the Friedel-Crafts postfunctional polymerization, the end groups of BICPs were hindered functional with other groups. Tunable energy gaps of BICPs with stable spectral and electrochemical were obtained. At last, the optoelectronic properties of these polymers were systemically studied. These charge storage properties were studied by using these polymers in transistor memories as the polymer electret layers. On the other hand, graphene were growth on copper-nickel alloy nanofibers by chemical vapor deposition (CVD) and patterned reduced graphene oxide (rGO) conductive films were prepared through high temperature reduction method, respectively. After that, all-solution processable organic memory device was prepared by using patterned rGO as the top and bottom electrodes, hindered functionalized polymer as the active layers. The details of the dissertation are as follows: 1.The design and synthesis of polymer semiconductors were introduced briefly, especially the synthesis of organic semiconductor materials by the Friedel-Crafts reaction of fluorenyl tertiary alcohols and the three-dimensional branched conjugated polymers and their application in optoelectronic devices. Then, an overview of the research progress of polymer electrets in the organic field effect transistor memories and flexible organic memory devices were presented. Finally, the design ideas and main studies of this dissertation were put forward. 2.Based on the research foundation of our group in the synthesis of organic semiconductor materials through BF〓Et?O catalyzed Friedel-Crafts reaction of fluorenyl tertiary alcohols, we proposed the Friedel-Crafts polymerization of AB〓 (x≥2) tertiary alcohols for the synthesis of BICPs. The new polymerization method exhibits the characterization of simple, efficient, atom-economical, and non-metal catalyst. After careful study the polymerization conditions, it is found that the polymerization process was finished in a very short time (<5min). Polymers with molecular weight (Mn) of 22700 g/mol and narrow polydispersity index (PDI=1.52) were obtained through slow monomer addition polymerization. After that, a novel series of fluorene and cyclopentadithiophene based BICPs were prepared and these optoelectronic properties were studied. The cyclopentadithiophene based BICPs exhibit near infrared absorption spectra. 3.p-n type fluorenyl tertiary alcohols containing electron donating group, i.e., carbazole or thiophene (p-type group) and electron-withdrawing group, i.e., cyano (n-type group) were designed and synthesized according to the p-n energy band theory, p-n type BICPs were prepared through Friedel-Crafts polymerization. Spectral characterization revealed that the absorption and emission peaks exhibit red-shift in comparison with the BICPs which do not contain cyano groups. The emission peaks in thin film state indicated that the introduction of cyano groups not only suppress the green emission peaks but also reduces the bandgaps of these polymers, which is good for the carrier injection. 4.The HICP, i.e., PCzPF, with carbazole as the end functional groups was hindered functional with 9-phenyl-9H-fluorene (PF) or 9,9,9",9"-tetraoctyl-9'-phenyl-9H,9'H,9"H-2,2':7',2"-terfluorene(TF) through BF〓·Et?O catalyzed Friedel-Crafts postfunctional polymerization. We found that the introduction of functional groups improve the spectral and electrochemical stability. Impressively, postfunctional with PF groups increased the HOMO energy level and decreased the LUMO energy level, which regulate the energy gaps of the polymer effectively. 5.In order to study the relationship between the functional groups and the charge storage properties of CIHPs. CIHPs, including PCzPPF, PCzPF, PCNCzPF and PCPDT8, were used as the polymer electret layers in transistor memories. The programming progress was conducted by applied a negative pulse on these transistor memories. Erasing process was realized by light irradiation these devices. Interestingly, all of these transistor memories exhibit stepwise negative shifts of transfer curves with the increase of the negative gate bias. In this case, PCPDT8 containing high electron density cyclopentadithiophene group and p-n type PCNCzPF based transistor memories, exhibited larger memory windows than others, which are 34.2 and 45.0 V, respectively. The positive shift of the transfer curve was occurred when a positive gate voltage was applied and combined with light irradiation, indicating the injection of electron into the electret. After applying a negative pulse, the transfer curves return to the initial state. In this case, PCzPPF and PCzPF based transistor memories exhibited large memory windows of 42.7 and 40.5 V, separately, which are higher than PCNCzPF and PCPDT8 based devices. Since these devices could be injected hole into the electret layer by applying negative pulse and electron by applying positive gate voltage combined with light irradiation, respectively, these devices exhibit ambipolar memory properties. In this case, the memory windows of these transistor memories are the accumulation of the memory windows from both the hole-trapping mode and the electron-trapping mode. As a result, the memory windows of these devices by using PCzPPF, PCzPF, PCNCzPF and PCPDT8 as the electret layer are 73.3, 69.6, 63.6 and 69.3 V, respectively. 6.In order to prepare all-solution processable, flexible organic electronic devices by using these BICPs, we tried to prepare the flexible graphene electrodes. We first prepare the polymer nanofibers containing metal salt (copper or nickel acetate), following calcination and thermal reduction process to prepare metal nanofibers. By using these obtained metal nanofibers as the templates and polystyrene as the solid carbon source, graphene was grown on these nanofibers at low temperature through CVD method, the growth temperature is 450℃. The graphene coated Cu-Ni NFs exhibited excellent anti-oxidation and anti-corrosion properties. After that, the flexible, green light emissive ACEL device has been demonstrated by using graphene coated Cu-Ni NF thin films as the electrode. On the other hand, patterned rGO conductive films were prepared through high temperature reduction method and were used as the top and bottom electrodes for all-solution processable organic memory device which with hindered functionalized polymer as the active layers. The device exhibited flash memory effect with ON/OFF ratio up to 3.0×10?。 The current in both of the ON and OFF states under the bending condition remained stable without any substantial current fluctuation, indicating good mechanical endurance of the organic memory device. It was believed that the idea of all-solution processable flexible organic memory device can also be used for the preparation of other organic devices. Keywords:fluorenyl tertiary alcohol, Friedel-Crafts polymerization, interrupted conjugation polymers, organic memory device, all-solution processable
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